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2SK2993 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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2SK2993 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2993 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 250 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 250 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 10 A — 82 105 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 10 20 — S Input capacitance Ciss — 4000 — Reverse transfer capacitance Crss — 300 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 1000 — pF Rise time tr — 15 — Turn−on time ton — 35 — Fall time tf — 30 — Switching time Turn−off time toff — 180 — ns Total gate charge (gate−source plus gate−drain) Qg — 100 — Gate−source charge Qgs — 70 — Gate−drain (“miller”) charge Qgd VDD ≈ 200 V, VGS = 10 V, ID = 20 A — 30 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 60 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V — — −2.0 V Reverse recovery time trr — 300 — ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / μs — 3.3 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2993 Part No. (or abbreviation code) |
Podobny numer części - 2SK2993_06 |
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Podobny opis - 2SK2993_06 |
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