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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SK3236 Dane(HTML) 5 Page - Toshiba Semiconductor |
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2SK3236 Datasheet(Arkusz danych) 5 Page - Toshiba Semiconductor |
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2SK3236 2006-11-17 5 rth − tw Safe operating area EAS – Tch Drain-source voltage VDS (V) Pulse width tw (S) Channel temperature (initial) Tch (°C) 1 0.1 10 μ 100 μ 10 1 m 10 m 100 m 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 4.16°C/W Duty = 0.5 0.01 0 25 20 40 60 80 50 75 100 125 150 0.1 0.1 1 10 100 1000 1 10 100 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. DC operation Tc = 25°C 100 μs * 1 ms * ID max (pulse) * ID max (continuous) VDSS max 0 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 40 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS |
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