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TC7WG00FU Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TC7WG00FU Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7WG00FU/FK 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG00FU,TC7WG00FK Dual 2-Input NAND Gate Features • High-level output current: IOH/IOL = ±8 mA (min) at VCC = 3 V • High-speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V • 5.5-V tolerant inputs • 3.6-V power down protection outputs Marking Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low State. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND TC7WG00FU TC7WG00FK Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~7.0 V −0.5~4.6 (Note 1) DC output voltage VOUT −0.5~VCC + 0.5 (Note 2) V Input diode current IIK −20 mA Output diode current IOK −20 (Note 3) mA DC output current IOUT ±25 mA DC VCC / ground current ICC ±50 mA Power dissipation PD 300 (SM8) 200 (US8) mW Storage temperature Tstg −65~150 °C SM8 US8 Product name G 00 Lot No. WG 00 VCC 2B 2A 1A GND 1B 1 2 3 4 2Y 1Y 8 7 6 5 |
Podobny numer części - TC7WG00FU |
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Podobny opis - TC7WG00FU |
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