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2SA1312 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SA1312
Szczegółowy opis  Audio Frequency Low Noise Amplifier Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1312 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  2SA1312_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1312_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1312_07 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1312_07 Datasheet HTML 4Page - Toshiba Semiconductor 2SA1312_07 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1312
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −120 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
DC current gain
hFE
(Note)
VCE = −6 V, IC = −2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = −10 mA, IB = −1 mA
−0.3
V
Transition frequency
fT
VCE = −6 V, IC = −1 mA
100
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
4
pF
NF (1)
VCE = −6 V, IC = −0.1 mA, f = 100 Hz,
Rg
= 10 kΩ
0.5
6
Noise figure
NF (2)
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg
= 10 kΩ
0.2
3
dB
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol


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