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SI2312DS Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI2312DS Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si2312DS Vishay Siliconix Document Number: 71338 S-50574—Rev. E, 04-Apr-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 0369 12 15 VDS − Drain-to-Source Voltage (V) Coss Ciss VDS = 10 V ID = 5.0 A ID − Drain Current (A) VGS = 4.5 V ID = 5.0 A VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 02 46 8 ID = 5.0 A 20 1 0.01 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0.1 TJ = 150_C TJ = 25_C VGS = 2.5 V VGS = 4.5 V Crss 10 |
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