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TA75W393FU Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TA75W393FU Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TA75W393FU 2007-11-01 2 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VCC, VEE ±18 or 36 V Differential input voltage DVIN ±36 V Input voltage VIN +0.3~VCC V Power dissipation PD 250 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (VCC = 5V, VEE = GND, Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO 1 ― ― 2 5 mV Input bias current II 2 ― ― 25 250 nA Input offset current IIO 2 ― ― 5 50 nA Common mode input voltage CMVIN ― ― 0 ― VCC−1.5 V Supply current ICC 3 No load ― 0.8 2 mA Voltage gain GV ― RL = 15kΩ ― 200 ― V/mA Sink current Isink 4 IN (+) = 0VDC, IN (−) = 1VDC VOL = 1.5V 6 16 ― nA Output Voltage (“L” Level) VOL 5 IN (+) = 0VDC, IN (−) = 1VDC Isink = 3mA ― 0.2 0.4 V Output Leak Current ILEAK ― IN (+) = 1VDC, IN (−) = 0VDC VO = 5VDC ― 0.1 ― nA Response Time trsp 6 RL = 5.1kΩ, CL = 15pF ― 1.3 ― μs |
Podobny numer części - TA75W393FU_07 |
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Podobny opis - TA75W393FU_07 |
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