TA4015FE

2007-11-01

1

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4015FE

TA4015FE Use for Crystal Oscillators

Features

• Bias resistors, a transistor for oscillation and a transistor for

buffer are packed in one package; hence, TA4015FT can easily

compose a crystal oscillator.

• TA4015FE comes with a 6-pin thin ultra-compact package

and is suitable for super-high density mounting.

Characteristics

Symbol

Rating

Unit

Power supply voltage

6

V

Circuit current

9

mA

Total power dissipation

100

mW

Junction temperature

125

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Circuit current

⎯

1.10

1.32

1.52

mA

Oscillator base voltage

⎯

1.65

1.71

1.79

V

Oscillator emitter voltage

⎯

0.92

0.99

1.06

V

Buffer base voltage

⎯

2.20

2.28

2.36

V

Fout voltage

⎯

1.95

2.02

2.10

V

Characteristics

Symbol

Typ.

Unit

R1 resistance

7.5

k

Ω

R2 resistance

6.8

k

Ω

R3 resistance

24

k

Ω

R4 resistance

820

Ω

R5 resistance

820

Ω

Weight: 0.003 g (typ.)