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TA78033AF Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TA78033AF Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 10 page TA78033, 04, 05, 07, 08, 09AF 2006-11-06 2 Block Diagram Absolute Maximum Ratings (Ta = 25°C) (Note2) Characteristic Symbol Rating Unit Input voltage VIN 20 V Output current I OUT 1 A Operating Junction temperature Tj(opr) −40~135 °C Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Ta = 25°C 1 Power dissipation Tc = 25°C PD 10 W Note 2: Do not apply current and voltage (including reverse polarity) to any pin that is not specified. Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal characteristics Characteristic Symbol Max Unit Thermal resistance, junction to ambient Rth (j−a) 125 °C / W Thermal resistance, junction to case Rth (j−c) 12.5 °C / W Protection Function (reference) (Note3) Characteristics Symbol Test Condition Min Typ. Max Unit Thermal shutdown TSD VIN = VOUT + 5 V ― 175 ― °C Peak circuit current I PEAK VIN = VOUT + 5 V, Tj = 25°C ― 1.7 ― A Short circuit current I SC VIN = VOUT + 5 V, Tj = 25°C ― 1.5 ― A Note 3: Ensure that the devices operate within the limits of the maximum rating when in actual use. Safe operating Area circuit + - INPUT OUTPUT GND Reference voltage circuit Thermal shutdown circuit Over current protection circuit Startup circuit |
Podobny numer części - TA78033AF |
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Podobny opis - TA78033AF |
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