TC75S56F/FU/FE

2007-11-01

2

Characteristics

Symbol

Rating

Unit

Supply voltage

±3.5 or 7

V

Differential input voltage

±7

V

Input voltage

V

Output Current

±35

mA

TC75S56F/FU

200

Power dissipation

TC75S56FE

100

mW

Operating temperature

−40~85

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following

precautions:

In addition, check the power-on timing.

• Do not subject the device to excessive noise.