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2N2102 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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2N2102 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N2102 EPITAXIAL PLANAR NPN s GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. ® INTERNAL SCHEMATIC DIAGRAM December 2002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V VCEO Collector-Emitter Voltage (IB = 0) 65 V VCER Collector-Emitter Voltage (RBE ≤ 10Ω) 80 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A Ptot Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC 1 5 W W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TO-39 1/4 |
Podobny numer części - 2N2102 |
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Podobny opis - 2N2102 |
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