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IRFB17N20DPBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFB17N20DPBF Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFB/IRFS/IRFSL17N20DPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 5.3 ––– ––– S VDS = 50V, ID = 9.8A Qg Total Gate Charge ––– 33 50 ID = 9.8A Qgs Gate-to-Source Charge ––– 8.4 13 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 16 24 VGS = 10V, td(on) Turn-On Delay Time ––– 11 ––– VDD = 100V tr Rise Time ––– 19 ––– ID = 9.8A td(off) Turn-Off Delay Time ––– 18 ––– RG = 5.1Ω tf Fall Time ––– 6.6 ––– VGS = 10V Ciss Input Capacitance ––– 1100 ––– VGS = 0V Coss Output Capacitance ––– 190 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 44 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1340 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 76 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 160V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 240 mJ IAR Avalanche Current ––– 9.8 A EAR Repetitive Avalanche Energy ––– 14 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.8A, VGS = 0V trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = 9.8A Qrr Reverse RecoveryCharge ––– 900 1350 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 16 64 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.17 Ω VGS = 10V, ID = 9.8A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.1 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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