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AM1011-070 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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AM1011-070 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 4 page RF & MICROWAVE TRANSISTORS September 1992 L-BAND AVIONICS APPLICATIONS .400 x . 400 2NLFL (S042) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 70 W MIN. WITH 6.7 dB GAIN DESCRIPTION The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1011-070 is supplied in the AMPAC ™ Her- metic M etal/Ceramic package with i nternal Input/Output matching structures. PIN CONNECTION BRANDING 1011-70 ORDER CODE AM1011-70 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 100°C) 200 W IC Device Current* 8.0 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.68 °C/W *Applies only to rated RF amplifier operation AM1011-070 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/4 |
Podobny numer części - AM1011-070 |
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Podobny opis - AM1011-070 |
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