STGFL6NC60D datasheet(4/19 Pages) STMICROELECTRONICS

Numer części	STGFL6NC60D

Szczegółowy opis	N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT

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Producent	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGBL6NC60D - STGDL6NC60D - STGPL6NC60D - STGFL6NC60D

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2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC = 1mA, VGE = 0

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15V, IC= 3A

VGE= 15V, IC= 3A,@ 125°C

VGE = 15V, IC= 1.5A

2.3

2.1

2.0

2.9

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

V

ICES

Collector cut-off current

(VGE = 0)

VCE = Max rating,TC= 25°C

VCE = Max rating,TC= 125°C

50

5

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20V, VCE= 0

±100

nA

gfs

Forward transconductance

VCE = 15V, IC= 3A

3S

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

208

32.5

5.4

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 3A,

VGE = 15V,

(see Figure 17)

12

2.6

4.9

nC

Podobny numer części - STGFL6NC60D

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STGFL6NC60D	523Kb / 19P	600 V - 6 A hyper fast IGBT
STMicroelectronics	STGFL6NC60DI	645Kb / 18P	6 A, 600 V hyper fast IGBT

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Podobny opis - STGFL6NC60D

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