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STB11NM80 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STB11NM80
Szczegółowy opis  N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NM80 Arkusz danych(HTML) 3 Page - STMicroelectronics

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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical ratings
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D²PAK/
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
800
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25°C
11
11 (1)
1.
Limited only by the maximum temperature allowed
A
ID
Drain current (continuous) at TC=100°C
8
8 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
44
44 (1)
A
PTOT
Total dissipation at TC = 25°C
150
35
W
Derating factor
1.2
0.28
W/°C
VISO
Insulation withstand voltage (DC)
--
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-65 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220/D²PAK/
TO-247
TO-220FP
Rthj-case
Thermal resistance junction-case max
0.83
3.6
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50 V)
400
mJ


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