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BTA2008-800E Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BTA2008-800E Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BTA2008_SER_D_E_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 18 January 2008 2 of 12 NXP Semiconductors BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. Table 2. Ordering information Type number Package Name Description Version BTA2008-600D TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA2008-600E BTA2008-800D BTA2008-800E Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BTA2008-600D; BTA2008-600E [1] - 600 V BTA2008-800D; BTA2008-800E - 800 V IT(RMS) RMS on-state current full sine wave; Tlead ≤ 70 °C; see Figure 4 and 5 - 0.8 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 9 A t = 16.7 ms - 9.9 A I2tI2t for fusing tp = 10 ms - 0.41 A2s dIT/dt rate of rise of on-state current ITM = 1.5 A; IG =20mA; dIG/dt = 0.2 A/µs - 100 A/ µs IGM peak gate current - 1 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C |
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