2008. 2. 19

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SEMICONDUCTOR

TECHNICAL DATA

KMB3D5N40SA

N-Ch Trench MOSFET

Revision No : 0

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for Load switch and Back-Light

Inverter.

FEATURES

Drain-Source ON Resistance

Super Hige Dense Cell Design

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Note > *Surface Mounted on 1

1 FR4 Board, t

5sec

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

20

V

Drain Current

DC@Ta=25

3.5

A

DC@Ta=70

2.8

Pulsed

14

Drain-Source-Diode Forward Current

1.0

A

Drain Power Dissipation

Ta=25

1.25

W

Ta=70

0.8

Maximum Junction Temperature

150

Storage Temperature Range

-55

150

Thermal Resistance, Junction to Ambient

100

/W

2

3

1

GS

D

1

2

3

KN1