HCF40109BM1 datasheet(4/12 Pages) STMICROELECTRONICS

Numer części	HCF40109BM1

Szczegółowy opis	QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER

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DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C, CL = 50pF, RL = 200kΩ,

typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns)

Test Conditions

Value

Symbol

Parameter

Shifting Mode

VCC (V) V DD (V)

Min.

Typ.

Max.

Unit

tPHL,

tPLH

Propagation Delay Time

(data input to output)

High to Low Level

L- H

5

10

300

600

ns

5

15

220

440

10

15

180

360

H- L

10

5

850

1600

15

5

850

1600

15

10

290

580

Low to High Level

L- H

5

10

130

260

ns

5

15

120

240

10

15

70

140

H- L

10

5

230

460

15

5

230

460

15

10

80

160

tPHZ

3-State Disable Delay Time

Output High to High Impedance

L- H

5

10

60

120

ns

5

15

50

100

10

15

35

70

H- L

10

5

120

240

15

5

120

240

15

10

40

80

tPZ H

High Impedance to Output High

L- H

5

10

320

640

ns

5

15

230

460

10

15

180

360

H- L

10

5

800

1500

15

5

800

1500

15

10

280

560

tPLZ

Output Low to High Impedance

L- H

5

10

370

740

ns

5

15

300

600

10

15

250

500

H- L

10

5

850

1600

15

5

850

1600

15

10

350

700

STATIC ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Value

VI

VO

IO VCC VDD

TLow*25

°CTHigh*

Symbol

Parameter

(V)

Min.

Max.

Min.

Typ.

Max.

Min.

Max.

Unit

IOH,

IOL**

3-State

Output

Leakage

Current

HCC

Types

0/18

18

± 0.4

±10 -4 ± 0.4

± 12

µA

HCF

Types

0/15

15

± 1.0

±10 -4 ± 1.0

± 7.5

CI

Input Capacitance

Any Input

5

7.5

pF

*TLow =– 55

°C for HCC device : – 40°C for HCF device.

*THigh = + 125

°C for HCC device : + 85°C for HCF device.

The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.

** Forced output disabled.

HCC/HCF40109B

4/12

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