Zakładka z wyszukiwarką danych komponentów |
|
2SC2714 Arkusz danych(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
|
2SC2714 Arkusz danych(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2714 Document number: BL/SSSTC098 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA 40 200 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA B 0.3 V Transition frequency fT VCE=6V, IC= 1mA 400 MHz Output capacitance Cob VCB=6V, IE=0,f=1MHz 0.7 pF Noise Figure NF VCE=6V,IC=1mA,f=1MHz 2.5 5 dB CLASSIFICATION OF hFE(1) Rank R O Y Range 40-80 70-140 100-200 Marking QR QO QY |
Podobny numer części - 2SC2714 |
|
Podobny opis - 2SC2714 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |