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2SC2714 Arkusz danych(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Numer części 2SC2714
Szczegółowy opis  Silicon Epitaxial Planar Transistor
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Producent  BILIN [Galaxy Semi-Conductor Holdings Limited]
Strona internetowa  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC2714 Arkusz danych(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2714
Document number: BL/SSSTC098
www.galaxycn.com
Rev.A
2
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=1mA,IB=0
B
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=18V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=1mA
40
200
Collector-emitter saturation
voltage
VCE(sat)
IC=10mA, IB=1mA
B
0.3
V
Transition frequency
fT
VCE=6V, IC= 1mA
400
MHz
Output capacitance
Cob
VCB=6V, IE=0,f=1MHz
0.7
pF
Noise Figure
NF
VCE=6V,IC=1mA,f=1MHz
2.5
5
dB
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
Range
40-80
70-140
100-200
Marking
QR
QO
QY


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