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L6506D Arkusz danych(PDF) 2 Page - STMicroelectronics |
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L6506D Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 8 page PIN CONNECTIONS (top view) ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Un it VCC Supply Voltage 10 V Vi Input Signals 7 V Ptot Total Power Dissipation (Tamb =70 °C) for DIP18 Total Power Dissipation (Tamb =70ÉC) for SO20 1 0.8 W W Tj Junction Temperature 150 °C Tstg Storage Temperature -40 to 150 °C THERMAL DATA Symbol Parameter DIP18 SO20 Unit Rth j-amb Thermal Resistance Junction-ambient Max. 80 100 °C/W ELECTRICAL CHARACTERESTICS (VCC = 5.0V, Tamb =25 °C; unless otherwise noted) Symbol Parameter T est Co ndi tio ns Min. T yp. Max. Un it VCC Supply Voltage 4.5 7 V ICC Quiescent Supply Current VCC =7V 25 mA DIP 18 SO20 COMPARATOR SECTION Symbol Parameter T est Co ndi tio ns Min. T yp. Max. Un it VIN Input Voltage Range Vsense Inputs –0.3 3 V VIO Input Offset Voltage VIN = 1.4V ±5.0 mV IIO Input Offset Current ±200 nA IIB Input Bias Current 1 µA Response time VREF = 1.4V VSENS = 0 to 5V 0.8 1.5 µs L6506 -L6506D 2/8 |
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