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BAS16X Arkusz danych(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS16X Arkusz danych(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page BL Galaxy Electrical Production specification High speed Switching Diode BAS16X Document number: BL/SSSDD008 www.galaxycn.com Rev.A 1 FEATURES Pb Lead-free Small package. High speed switching. APPLICATIONS High speed switching application. SOD-523 ORDERING INFORMATION Type No. Marking Package Code BAS16X A6 SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC Reverse voltage VR 75 V Continuous forward current IF 200 mA Peak forward surge current IFM 500 mA Total power dissipation Ptot 150 mW Total resistance junction to ambient RθJA 635 ℃/W Junction temperature Tj 150 ℃ Storage temperature Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 75 V IR=100μA Forward voltage VF 0.715 0.815 1 1.25 V IF=1mA IF=10mA IF=50mA IF=150mA Reverse current IR 1.0 μA VR=75V Diode capacitance Cd 2.0 pF VR=0V,f=1MHz Reverse recovery time trr 6 ns IF=IR=10mA,RL=50Ω |
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