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SI1012R Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI1012R Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si1012R/X Vishay Siliconix www.vishay.com 4 Document Number: 71166 S-50366—Rev. B, 28-Feb-05 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 0123456 ID = 350 mA 1000 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) ID = 200 mA TJ = 125_C TJ = 25_C TJ = −55_C 10 100 −0.3 −0.2 −0.1 −0.0 0.1 0.2 0.3 −50 −25 0 25 50 75 100 125 ID = 0.25 mA Threshold Voltage Variance vs. Temperature TJ − Temperature (_C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 −50 −25 0 25 50 75 100 125 IGSS vs. Temperature TJ − Temperature (_C) VGS = 4.5 V 0 1 2 3 4 5 6 7 −50 −25 0 25 50 75 100 125 BVGSS vs. Temperature TJ − Temperature (_C) |
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