Zakładka z wyszukiwarką danych komponentów |
|
STP6NM60N Arkusz danych(PDF) 5 Page - STMicroelectronics |
|
STP6NM60N Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 300V, ID = 2.3A, RG= 4.7Ω, VGS = 10V (see Figure 17) 10 8 40 9 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 4.6 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 18.4 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 4.6A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6A, di/dt = 100A/µs, VDD=20V, Tj= 25°C (see Figure 19) 300 2 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6A, di/dt = 100A/µs, VDD=20V, Tj= 150°C (see Figure 19) 470 3 12 ns µC A |
Podobny numer części - STP6NM60N |
|
Podobny opis - STP6NM60N |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |