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STP6NM60N Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STP6NM60N
Szczegółowy opis  N-channel 600V - 0.85廓 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6NM60N Arkusz danych(HTML) 5 Page - STMicroelectronics

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STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 300V, ID = 2.3A,
RG= 4.7Ω, VGS = 10V
(see Figure 17)
10
8
40
9
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
4.6
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
18.4
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD= 4.6A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.6A,
di/dt = 100A/µs,
VDD=20V, Tj= 25°C
(see Figure 19)
300
2
12
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.6A,
di/dt = 100A/µs,
VDD=20V, Tj= 150°C
(see Figure 19)
470
3
12
ns
µC
A


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