M40Z111W datasheet(9/15 Pages) STMICROELECTRONICS

Numer części	M40Z111W

Szczegółowy opis	5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs

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M40Z111, M40Z111W

Table 6. Power Down/Up AC Characteristics

Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).

2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC

passes VPFD (min).

3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

4. tER (min) = 20ms for Industrial Temperature Range - Grade 6 device.

VCC Noise And Negative Going Transients

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting inspikes onthe VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic by-

pass capacitor value of 0.1µF (as shown in Figure

8) is recommended in order to provide the needed

filtering.

In addition to transients that are caused by normal

SRAM operation, power cycling can generate neg-

ative voltage spikes on VCC that drive it to values

below VSS by as much as one volt. These negative

spikes can cause data corruption in the SRAM

while in battery backup mode. To protect from

these voltage spikes, STMicroelectronics recom-

mends connecting a schottky diode from VCC to

VSS (cathode connected to VCC, anode to VSS).

Schottky diode 1N5817 is recommended for

through hole and MBRS120T3 is recommended

for surface mount.

Figure 8. Supply Voltage Protection

Symbol

Parameter(1)

Min

Max

Unit

tF

(2)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(3)

VPFD (min) to VSS VCC Fall Time

10

µs

tR

VPFD (min) to VPFD (max) VCC Rise Time

10

µs

tRB

VSS to VPFD (min) VCC Rise Time

1µs

tEDL

Chip Enable Propagation Delay

M40Z111

15

ns

M40Z111W

20

ns

tEDH

Chip Enable Propagation Delay

M40Z111

10

ns

M40Z111W

20

ns

tER

(4)

Chip Enable Recovery

40

200

ms

tWPT

Write Protect Time

M40Z111

40

150

µs

M40Z111W

40

250

µs

AI00622

VCC

0.1

µF

DEVICE

VCC

VSS

Podobny numer części - M40Z111W

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	M40Z111W	180Kb / 21P	5V or 3V NVRAM supervisor for up to two LPSRAMs
	M40Z111WMH6E	180Kb / 21P	5V or 3V NVRAM supervisor for up to two LPSRAMs
	M40Z111WMH6F	180Kb / 21P	5V or 3V NVRAM supervisor for up to two LPSRAMs

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Podobny opis - M40Z111W

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	M40Z111	180Kb / 21P	5V or 3V NVRAM supervisor for up to two LPSRAMs
	M40Z300	348Kb / 21P	5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
	M40Z300	221Kb / 25P	5V or 3V NVRAM supervisor for up to 8 LPSRAMs
	M40Z300AV	272Kb / 20P	3V NVRAM Supervisor for Up to 8 LPSRAMs
	M40SZ100Y	285Kb / 19P	5V or 3V NVRAM SUPERVISOR FOR LPSRAM
	M40SZ100Y	230Kb / 25P	5V or 3V NVRAM supervisor for LPSRAM
	M40Z300	431Kb / 25P	5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
	M40SZ100Y	442Kb / 24P	5 V or 3 V NVRAM supervisor for LPSRAM
	M40Z300	128Kb / 16P	NVRAM CONTROLLER for up to EIGHT LPSRAM
	STM706T	468Kb / 26P	3V Supervisor

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