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STF15NM65N Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STF15NM65N Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =325 V, ID = 7.75 A RG =4.7 Ω VGS = 10 V (see Figure 18) 25 8 80 26 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 15.5 62 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 15.5 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25 °C (see Figure 20) 460 6 27 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 20) 600 8 27 ns µC A |
Podobny numer części - STF15NM65N |
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Podobny opis - STF15NM65N |
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