SI4500BDY_06 datasheet(3/9 Pages) VISHAY

Numer części	SI4500BDY

Szczegółowy opis	Complementary MOSFET Half-Bridge (N- and P-Channel)

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Document Number: 72281

S-61005-Rev. C, 12-Jun-06

www.vishay.com

3

Vishay Siliconix

Si4500BDY

N-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

30

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS = 5 thru 3 V

2.5 V

2 V

1.5 V

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

5

10

15

20

25

30

ID - Drain Current (A)

VGS = 4.5 V

VGS = 2.5 V

0

1

2

3

4

5

0

246

8

10

12

Qg - Total Gate Charge (nC)

VDS = 10 V

ID = 9.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

- 55 °C

25 °C

0

200

400

600

800

1000

1200

1400

1600

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 9.1 A

TJ - Junction Temperature (°C)

Podobny numer części - SI4500BDY_06

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Vishay Siliconix	SI4500BDY	278Kb / 12P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. D, 27-Apr-09

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	SI4500BDY	278Kb / 12P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. D, 27-Apr-09
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