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STB12NM50-1 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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5 / 17 page STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics 5/17 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 11 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=100V, Tj=25°C (see Figure 16) 270 2.23 16.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 16) 340 3 18 ns µC A |
Podobny numer części - STB12NM50-1 |
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Podobny opis - STB12NM50-1 |
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