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STYN212S Arkusz danych(PDF) 2 Page - Sirectifier Semiconductors |
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STYN212S Arkusz danych(HTML) 2 Page - Sirectifier Semiconductors |
2 / 2 page STYN212(S) thru STYN1012(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s STANDARD THERMAL RESISTANCES Symbol Test Conditions TYNx08(S) Unit IGT VD = 12 V RL = 33 W MIN. 2 mA MAX. 15 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kW Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 30 mA IL IG = 1.2 IGT MAX. 60 mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 200 V/µs VTM ITM = 24 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125° C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 30 mW IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA Tj = 125°C 2 mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 1.3 °C/W Rth(j-a) Junction to ambient TO-220AB 60 °C/W S = 1.0 cm ² 45 S= copper surface under tab TO-263 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Package x12 15 mA TO-220AB 200~~1000 200~~1000 STYN x12S 15 mA TO-263 OTHER INFORMATION Note: x = voltage Part Number Marking Weight Base Quantity Packing mode 0.5 g 50 Tube S T Y N x12 S T Y N x12 2.3 g 250 B ulk STYN x12S S T Y N STYN x12S |
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