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STPRF1640CT Arkusz danych(PDF) 1 Page - Sirectifier Semiconductors |
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STPRF1640CT Arkusz danych(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STPRF1630CT thru STPRF1640CT FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any A=Anode, C=Cathode, TAB=Cathode Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Thermal Resistance (Note 3) TRR Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance Per Element (Note 1) TJ, TSTG Operating And Storage Temperature Range Maximum Ratings 16 125 1.3 5 500 110 50 1.5 -55 to +150 A A V Unit uA pF ns o o o ROJC C/W o C o NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. A A C C(TAB) A C A Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB STPRF1630CT STPRF1640CT VRRM V 300 400 VRMS V 210 280 VDC V 300 400 Ultra Fast Recovery Diodes |
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Podobny opis - STPRF1640CT |
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