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STPR2020CT Arkusz danych(PDF) 1 Page - Sirectifier Semiconductors |
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STPR2020CT Arkusz danych(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STPR2010CT thru STPR2020CT FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB STPR2010CT STPR2020CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 A=Anode, C=Cathode, TAB=Cathode Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=95 C IFSM Maximum Forward Voltage At Pulse Width=300us 2% Duty Cycle IF=10A @TJ=25 C IF=10A @TJ=125 C IF=20A @TJ=25 C IF=20A @TJ=125 C VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance Per Element (Note 1) TRR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) TJ, TSTG Operating And Storage Temperature Range Maximum Ratings 20 125 1.1 1.0 1.25 1.20 5 100 100 35 1.5 -55 to +150 A A V Unit uA pF ns o o o o o o ROJC C/W o C o NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. A A C C(TAB) A C A o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Ultra Fast Recovery Diodes |
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