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STP30NM60ND Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STP30NM60ND
Szczegółowy opis  N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP30NM60ND Arkusz danych(HTML) 5 Page - STMicroelectronics

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STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND
Electrical characteristics
5/15
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
25
100
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 25A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25A, VDD = 60V
di/dt=100A/µs
(see Figure 4)
TBD
TBD
TBD
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25A,VDD = 60V
di/dt=100A/µs,
TJ = 150°C
(see Figure 4)
TBD
TBD
TBD
ns
µC
A


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