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TIP29, 30
High Power Bipolar Transistor
Page 2
31/05/05 V1.0
THERMAL CHARACTERISTICS
Maximum Ratings
Characteristic
Symbol
Maximum
Unit
Thermal Resistance Junction to Case
R
θjc
4.167
°C/W
Characteristic
Symbol
TIP29A
TIP30A
TIP29C
TIP30C
Unit
Collector-Emitter Voltage
VCEO
60
100
V
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Collector Current-Continuous
-Peak
IC
1.0
3.0
A
Base Current
IB
0.4
Total Power Dissipation at TC = 25°C
Derate above 25°C
PD
30
0.24
W
W/°C
Operating and Storage Junction Temperature Range
TJ, TSTG
-65 to +150
°C
Figure - 1 Power Derating