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STE250NS10 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STE250NS10 Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 12 page STE250NS10 Electrical characteristics 5/12 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 220 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 880 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 220A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 220A, VDD = 30V di/dt = 100A/µs, Tj = 150°C (see Figure 15) 200 1.35 13.5 ns µC A |
Podobny numer części - STE250NS10 |
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Podobny opis - STE250NS10 |
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