SD1680 datasheet(1/7 Pages) STMICROELECTRONICS

Numer części	SD1680

Szczegółowy opis	RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

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800/900 MHz APPLICATIONS

RF & MICROWAVE TRANSISTORS

2 x . 437 x .450 2LFL (M175)

epoxy sealed

.

915 - 960 MHz

.

24 VOLTS

.

CLASS AB PUSH PULL

.

INTERNAL INPUT MATCHING

.

DESIGNED FOR HIGH POWER LINEAR

OPERATION

.

HIGH SATURATED POWER CAPABILITY

.

GOLD METALLIZATION FOR HIGH

RELIABILITY

.

DIFFUSED EMITTER BALLAST

RESISTORS

.

COMMON EMITTER CONFIGURATION

.

POUT

= 100 W MIN. WITH 7.0 dB GAIN

DESCRIPTION

The SD1680 is a gold metallized epitaxial silicon

NPN planar transistor using diffused emitter ballast

resistors for high linearity Class AB operation in

cellular base station applications.

PIN CONNECTION

BRANDING

SD1680

ORDER CODE

SD1680

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Device Current

25

A

PDISS

Power Dissipation

310

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 55 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

0.55

°C/W

SD1680

1. Collector

3. Emitter

2. Base

THERMAL DATA

November 1992

1/7

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