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SD2900 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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SD2900 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 8 page SD2900 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s GOLD METALLIZATION s COMMON SOURCE CONFIGURATION s 2 - 500 MHz s 5 WATTS s 28 VOLTS s 13.5 dB MIN. AT 400 MHz s CLASS A OR AB OPERATION s EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION November 1999 ABSOLUTE MAXIMUM RATINGS (Tcase =25 oC) Symbol Parameter Val ue Uni t V(BR)DSS Drain Source Volt age 65 V VDGR Drain-Gate Voltage (RGS =1M Ω) 65 V VGS Gat e-Source Voltage ±20 V ID Drain Current 900 mA PDISS Power Dissipat ion 21. 9 W Tj Max. O perat ing Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA Rth (j-c) Rth(c -s) Junct ion-Case T hermal Resistance Case-Heatsink T hermal Resist ance ∗ 8.0 0.30 oC/W oC/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). M113 epoxy sealed ® ORDER CODE BRANDING SD2900 SD2900 1. Drain 3.Gate 2. Source 4. Source 1/8 |
Podobny numer części - SD2900 |
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Podobny opis - SD2900 |
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