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STF15NM60N Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STF15NM60N
Szczegółowy opis  N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF15NM60N Arkusz danych(HTML) 3 Page - STMicroelectronics

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STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
14
14 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
9
9(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
56
56 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
dv/dt (3)
3.
ISD ≤14A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1
4.2
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purposes
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
6A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
300
mJ


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