Zakładka z wyszukiwarką danych komponentów |
|
STGB30NC60WT4 Arkusz danych(PDF) 4 Page - STMicroelectronics |
|
STGB30NC60WT4 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STGB30NC60WT4 - STGP30NC60W - STGW30NC60W 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE=15 V, IC= 20 A VGE=15 V, IC= 20 A,Tc= 125 °C 2.1 1.8 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, Tc=125 °C 10 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ± 100 nA gfs (1) 1. Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V, IC= 20 A 15 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE=0 2080 175 52 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 20 A, VGE = 15 V, (see Figure 17) 102 17.5 47 nC nC nC |
Podobny numer części - STGB30NC60WT4 |
|
Podobny opis - STGB30NC60WT4 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |