SD100-13-23-222 datasheet(1/1 Pages) ADVANCEDPHOTONIX

Numer części	SD100-13-23-222

Szczegółowy opis	UV Enhanced Silicon Photodiode

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Producent	ADVANCEDPHOTONIX [Advanced Photonix, Inc.]

Strona internetowa	http://www.advancedphotonix.com

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FEATURES

DESCRIPTION

APPLICATIONS

• Low noise

• UV enhanced

• High shunt resistance

• High response

SYMBOL

PARAMETER

MIN

MAX

UNITS

VBR

Reverse Voltage

75

V

TSTG

Storage Temperature

-55

+150

°C

TO

Operating Temperature

-40

+125

°C

TS

Soldering Temperature*

+240

°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ID

Dark Current

VR = 5V

1

6.5

nA

RSH

Shunt Resistance

VR = 10 mV

286

MW

VR = 0 V, f = 1 MHz

87

CJ

Junction Capacitance

VR = 50 V, f = 1 MHz

9

pF

lrange

Spectral Application Range

Spot Scan

250

1100

nm

R

Responsivity

l= 365 nm V, VR = 0 V

0.14

0.18

VBR

Breakdown Voltage

I = 10 μA

30

50

V

NEP

Noise Equivalent Power

VR = 0V @ l=Peak

-

W/ √ Hz

RL = 50 Ω,VR = 0 V

190

tr

Response Time**

RL = 50 Ω,VR = 10 V

13

nS

SPECTRAL RESPONSE

0.00

0.10

0.20

0.30

0.40

0.50

0.60

Wavelength (nm)

UV Enhanced Silicon Photodiode

SD 100-13-23-222

PACKAGE DIMENSIONS INCH [mm]

TO-5 PACKAGE

The SD 100-13-23-222 is a UV enhanced silicon PIN

packaged in a hermetic TO-5 metal package.

• Instrumentation

• Industrial

• Medical

* 1/16 inch from case for 3 seconds max.

ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED

**Response time of 10% to 90% is specified at 660nm wavelength light.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are

subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com

Rev 6/29/06

ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED

CHIP DIMENSIONS INCH [mm]

PACKAGE DIMENSIONS INCH [mm]

CHIP DIMENSIONS INCH [mm]

TO-5 PACKAGE

ACTIVE AREA

1 ANODE

SCHEMATIC

2 CASE GROUND

3 CATHODE

Ø.100 [Ø2.54]

.118 [3.00]

SQUARE

45°

1

2

3

Ø.200 [5.08]

PIN CIRCLE

3X Ø.018 [0.46]

3X .500 [12.7] MIN

.157 [3.99]

.169 [4.29]

.010 [0.25] MAX

GLASS ABOVE CAP

TOP EDGE

90°

VIEWING

ANGLE

Ø.256 [6.50]

Ø.264 [6.70]

Ø .362 [9.19]

Ø .357 [9.07]

Ø.320 [8.13]

Ø.330 [8.38]

.090 [2.29]

Podobny numer części - SD100-13-23-222

Producent	Numer części	Arkusz danych	Szczegółowy opis
Luna Innovations Incorp...	SD100-13-23-222	184Kb / 2P	UV Enhanced Silicon Photodiode

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Podobny opis - SD100-13-23-222

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced Photonix, Inc.	PDU-V104	94Kb / 1P	UV Enhanced Silicon Photodiode
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Luna Innovations Incorp...	SD100-13-23-222	184Kb / 2P	UV Enhanced Silicon Photodiode
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Advanced Photonix, Inc.	SD100-13-23-022	97Kb / 1P	UV Enhanced Silicon Photodiode
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