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ST90R40C6 Arkusz danych(PDF) 10 Page - STMicroelectronics |
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ST90R40C6 Arkusz danych(HTML) 10 Page - STMicroelectronics |
10 / 56 page Figure 1-4. Memory Map 1.3 MEMORY 1.3.1 INTRODUCTION The memory of the ST9 is divided into two spaces: - Data memory with up to 64K (65536) bytes - Program memory with up to 64K (65536) bytes Thus, there is a total of 128K bytes of addressable memory space. The 16K bytes of on-chip ROM memory of the ST9040 are selected at memory addresses 0 through 3FFFh (hexadecimal) in the PROGRAM space. The DATA space includes the 512 bytes of on-chip EEPROM at addresses 0 through 1FFh and the 256 bytes of on-chip RAM memory at addresses 200h through 2FFh. 1.3.2 EEPROM 1.3.2.1 Introduction The EEPROMmemory provides user-programma- ble non-volatile memory on-chip, allowing fast and reliable storage of user data. As there is also no off-chip access required, as for an external serial EEPROM, high security levels can be achieved. The EEPROM memory is read as normal RAM memory at Data Space addresses 0 to 1FFh, how- ever one WAIT cycle is automatically added for a Read cycle, while a byte write cycle to the EEPROM will cause the start of an ERASE/WRITE cycle at the addressed location. Word (16 bit) writes are not allowed. The programming cycle is self-timed, with a typical programming time of 6ms. The voltage necessary for programming the EEPROM is internally gener- ated with a +18V charge pump circuit. Up to 16 bytes of data may be programmed into the EEPROM during the same write cycle by using the PARALLEL WRITE function. A standby mode is also available which disables all power consumption sources within the EEPROM for low power requirements. When STBY is high, any attempt to access the EEPROM memory will produce unpredictable results. After the re-ena- bling of the EEPROM, a delay of 6 INTCLK cycles must be allowed before the selection of the EEPROM. The EEPROM of the ST9040 has been imple- mented in a high reliability technology developed by SGS-THOMSON, this, together with the double bit structure, allow 300k Erase/Write cycles and 10 year data retention to be achieved on a microcon- troller. Control of the EEPROM is performed through one register mapped at register addressR241 in Page 0. ® ST9040 10/56 |
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