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STB11NB40 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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STB11NB40 Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 9 page THERMAL DATA Rthj-ca se Rthj -am b Rthc-si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.0 62. 5 0.5 300 oC/W oC/ W oC/W oC AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Uni t IAR Avalanche Current, Repetitive or Not -Repet itive (pulse width limited by Tj max, δ <1%) 10.7 A EAS Single Pulse Avalanche Energy (starting Tj =25 oC, ID =IAR,VDD =50 V) 530 mJ ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it V(BR)DSS Drain-source Breakdown Volt age ID =250 µAVGS =0 400 V IDSS Zero G ate Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating Tc =125 oC 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30 V ± 100 nA ON ( ∗) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA 3 45V RDS(on) St atic Drain-source On Resistance VGS =10V ID = 5.3 A 0. 48 0.55 Ω ID(o n) On St ate Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 10. 7 A DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconduct ance VDS >ID(on) xRDS(on)max ID =5.3 A 5 6.5 S Ciss Coss Crss Input Capacitance Output Capacit ance Reverse T ransfer Capacitance VDS =25 V f = 1 MHz VGS = 0 1115 210 22 1450 280 30 pF pF pF STB11NB40 2/9 |
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