Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

STB11NB40 Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STB11NB40
Szczegółowy opis  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB11NB40 Arkusz danych(HTML) 2 Page - STMicroelectronics

  STB11NB40 Datasheet HTML 1Page - STMicroelectronics STB11NB40 Datasheet HTML 2Page - STMicroelectronics STB11NB40 Datasheet HTML 3Page - STMicroelectronics STB11NB40 Datasheet HTML 4Page - STMicroelectronics STB11NB40 Datasheet HTML 5Page - STMicroelectronics STB11NB40 Datasheet HTML 6Page - STMicroelectronics STB11NB40 Datasheet HTML 7Page - STMicroelectronics STB11NB40 Datasheet HTML 8Page - STMicroelectronics STB11NB40 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
THERMAL DATA
Rthj-ca se
Rthj -am b
Rthc-si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.0
62. 5
0.5
300
oC/W
oC/ W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max,
δ <1%)
10.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
530
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
400
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
3
45V
RDS(on)
St atic Drain-source On
Resistance
VGS =10V
ID = 5.3 A
0. 48
0.55
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
10. 7
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on)max
ID =5.3 A
5
6.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
1115
210
22
1450
280
30
pF
pF
pF
STB11NB40
2/9


Podobny numer części - STB11NB40

ProducentNumer częściArkusz danychSzczegółowy opis
logo
STMicroelectronics
STB11NB40 STMICROELECTRONICS-STB11NB40 Datasheet
245Kb / 11P
   N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
logo
VBsemi Electronics Co.,...
STB11NB40 VBSEMI-STB11NB40 Datasheet
1Mb / 8P
   N-Channel 650 V (D-S) MOSFET
logo
STMicroelectronics
STB11NB40-1 STMICROELECTRONICS-STB11NB40-1 Datasheet
245Kb / 11P
   N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
STB11NB40T4 STMICROELECTRONICS-STB11NB40T4 Datasheet
245Kb / 11P
   N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
More results

Podobny opis - STB11NB40

ProducentNumer częściArkusz danychSzczegółowy opis
logo
STMicroelectronics
STU36NB20 STMICROELECTRONICS-STU36NB20 Datasheet
57Kb / 6P
   N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STB7NB40 STMICROELECTRONICS-STB7NB40 Datasheet
61Kb / 6P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP7NB40 STMICROELECTRONICS-STP7NB40 Datasheet
73Kb / 4P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP7NB60 STMICROELECTRONICS-STP7NB60 Datasheet
115Kb / 9P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STD2NB60 STMICROELECTRONICS-STD2NB60 Datasheet
291Kb / 9P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP12NB30 STMICROELECTRONICS-STP12NB30 Datasheet
56Kb / 6P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP10NB20 STMICROELECTRONICS-STP10NB20 Datasheet
122Kb / 9P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STB19NB20 STMICROELECTRONICS-STB19NB20 Datasheet
85Kb / 8P
   N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
June 1998
STU13NB60 STMICROELECTRONICS-STU13NB60 Datasheet
61Kb / 6P
   N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP5NB40 STMICROELECTRONICS-STP5NB40 Datasheet
71Kb / 7P
   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com