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STB20NM50FD Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STB20NM50FD Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 7 page 3/7 STB20NM50FD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 10A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 24 ns tr Rise Time 16 ns Qg Total Gate Charge VDD = 400V, ID = 20A, VGS = 10V 40 56 nC Qgs Gate-Source Charge 13 nC Qgd Gate-Drain Charge 19 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 20A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 9ns tf Fall Time 8.5 ns tc Cross-over Time 23 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 20 A ISDM (2) Source-drain Current (pulsed) 80 A VSD (1) Forward On Voltage ISD = 20A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 20A, di/dt = 100A/µs, VDD = 50V (see test circuit, Figure 5) 220 ns Qrr Reverse Recovery Charge 1.6 µC IRRM Reverse Recovery Current 15 A |
Podobny numer części - STB20NM50FD |
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Podobny opis - STB20NM50FD |
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