STB6NB50 datasheet(2/9 Pages) STMICROELECTRONICS

Numer części	STB6NB50

Szczegółowy opis	N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET

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THERMAL DATA

Rthj-case

Rthj -amb

Rthc-sink

T l

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

1.25

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Valu e

Unit

IAR

Avalanche Current , Repet itive or Not-Repet itive

(pulse width limited by Tj max)

5. 8

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, I

D =IAR,VDD =50 V )

290

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

500

V

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating

Tc =125

oC

1

50

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

VGS(th)

Gat e Threshold

Voltage

VDS =VGS

ID = 250

µA

345

V

RDS(on)

Static Drain-source O n

Resist ance

VGS =10V

ID = 2.9 A

1.35

1. 5

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

5. 8

A

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

gfs (

∗)Forward

Transconduct ance

VDS >ID(o n) xRDS(on )max

ID =2.9 A

2. 5

4

S

Ciss

Coss

Crss

Input Capacitance

Out put Capacitance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS =0

680

110

12

884

149

16

pF

STB6NB50

2/9

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