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STD60NF55L Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STD60NF55L Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STD60NF55L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 25 V, ID = 30 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) 30 ns tr Rise Time 180 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 40 V, ID = 60 A, VGS = 5 V 40 10 20 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 25 V, ID = 30 A, RG =4.7Ω, VGS = 4.5V (see test circuit, Figure 3) 80 35 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 60 A ISDM (2) Source-drain Current (pulsed) 240 A VSD (1) Forward On Voltage ISD = 60A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40 A, di/dt = 100 A/µs, VDD = 25 V, Tj = 150 °C (see test circuit, Figure 5) 65 130 4 ns nC A Thermal Impedance Safe Operating Area |
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