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ST2054BDR Arkusz danych(PDF) 7 Page - STMicroelectronics |
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ST2054BDR Arkusz danych(HTML) 7 Page - STMicroelectronics |
7 / 13 page ST2054 Electrical characteristics 7/13 Note: 1 Pulse testing techniques maintain junction temperature close to ambient temperature: thermal effect must be takes into account separately. 2 Specified by design, not production tested. 3 Guaranteed by design. Table 8. Supply current characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ISOL Current low level output VIENX = 0, No Load, 0.05 2 µA VIENX = 0, No Load, TJ=-40 to 125°C 20 ISOH Current low high output VIENX = VI, No Load, 140 180 µA VIENX = VI, No Load, TJ=-40 to 125°C 200 IL Output leakage current VIENX = 0, Output connected to GND, TJ=-40 to 125°C 20 µA Table 9. Undervoltage characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VIL Low level input voltage 22.5 V VHYS Hysteresis 100 mV Table 10. Overcurrent (OC) characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ISINK Sink current VO = 5V 10 mA VO Output low voltage IO = 5mA 0.5 V IOFF OFF-state current VO = 5V VO = 3.3V 1 µA TFB Fault-blanking period VI = 5.5V, TJ = 25°C (See Note 2 and 3) 210 ms |
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