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STP10NB50FP Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STP10NB50FP Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 250 V ID =5.3 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 25 13 14 20 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 160 V ID =10 A VGS =10 V 38 10 17 49 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 160 V ID =10 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 13 15 25 11 14 28 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 10. 6 42. 4 A A VSD ( ∗) Forward On Volt age ISD =10.6 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =10.6 A di/dt = 100 A/ µs VDD =50 V Tj = 150 oC (see test circuit, figure 5) 560 4.9 17.5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Safe Operating Area for TO-220FP STP10NB50 STP10NB50FP 3/9 |
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Podobny opis - STP10NB50FP |
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