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STB14NK60 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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3 / 17 page 3/17 STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 6 A 0.45 0.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID= 6 A 11 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2220 240 57 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 122 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 6 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 21) 26 18 62 13 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 12 A, VGS = 10V (see, Figure 24) 75 13.2 38.6 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 12 48 A A VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 22) 490 4.7 19.3 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 22) 664 6.8 20.5 ns µC A |
Podobny numer części - STB14NK60 |
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Podobny opis - STB14NK60 |
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