STP19NB20 datasheet(1/12 Pages) STMICROELECTRONICS

Numer części	STP19NB20

Szczegółowy opis	N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH??MOSFET

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August 2002

STP19NB20 - STP19NB20FP

STB19NB20-1

N-CHANNEL 200V - 0.15

Ω - 19A - TO-220/TO-220FP/I2PAK

PowerMESH™ MOSFET

(1)ISD ≤19 A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

s

TYPICAL RDS(on) = 0.15 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP19NB20

STP19NB20FP

STB19NB20-1

200 V

< 0.18

Ω

< 0.18

Ω

< 0.18

Ω

19 A

10 A

19 A

Symbol

Parameter

Value

Unit

STP(B)19NB20(-1)

STP19NB20FP

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

200

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

19

10

A

ID

Drain Current (continuous) at TC = 100°C

12

6.0

A

IDM (l)

Drain Current (pulsed)

76

A

PTOT

Total Dissipation at TC = 25°C

125

35

W

Derating Factor

1

0.28

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

TO-220FP

1

2

3

I2PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

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