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STP19NB20 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STP19NB20 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 12 page 1/12 August 2002 STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15 Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET (1)ISD ≤19 A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX s TYPICAL RDS(on) = 0.15 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP19NB20 STP19NB20FP STB19NB20-1 200 V 200 V 200 V < 0.18 Ω < 0.18 Ω < 0.18 Ω 19 A 10 A 19 A Symbol Parameter Value Unit STP(B)19NB20(-1) STP19NB20FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 200 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 19 10 A ID Drain Current (continuous) at TC = 100°C 12 6.0 A IDM (l) Drain Current (pulsed) 76 76 A PTOT Total Dissipation at TC = 25°C 125 35 W Derating Factor 1 0.28 W/°C dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220 1 2 3 TO-220FP 1 2 3 I2PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM |
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