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STP20NE10 Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STP20NE10
Szczegółowy opis  N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NE10 Arkusz danych(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj -am b
Rthc-si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.67
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max,
δ <1%)
20
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =30 V)
170
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
100
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
2
34V
RDS( on)
St atic Drain-source On
Resistance
VGS =10V
ID = 10 A
0. 07
0.1
Ω
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on) max
VGS =10 V
20
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on)max
ID =10 A
6
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
1600
180
50
2100
250
70
pF
pF
pF
STP20NE10
2/8


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