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STP2HNC60 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STP2HNC60 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STP2HNC60/STP2HNC60FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300V, ID = 1 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 9 8.5 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 2 A, VGS = 10V 11.3 2.8 5 15.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 2 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 18 9 27 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 2.2 A ISDM (2) Source-drain Current (pulsed) 8.8 A VSD (1) Forward On Voltage ISD = 2.2 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 2A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 480 ns Qrr Reverse Recovery Charge 1032 nC IRRM Reverse Recovery Current 4.3 A Safe Operating Area For TO-220FP Safe Operating Area |
Podobny numer części - STP2HNC60 |
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Podobny opis - STP2HNC60 |
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