STP3N100 datasheet(3/10 Pages) STMICROELECTRONICS

Numer części	STP3N100

Szczegółowy opis	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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3 / 10 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD =400 V

ID =1.8 A

RG =50

Ω

VGS =10 V

(see test circuit, figure 3)

70

90

ns

(di/dt) on

Turn-on Current Slope

VDD =600 V

ID =3.5 A

RG =50

Ω

VGS =10 V

(see test circuit, figure 5)

100

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V ID =3.5 A

VGS =10 V

48

7

24

60

nC

SWITCHING OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =600 V

ID =3.5 A

RG =50

Ω VGS =10 V

(see test circuit, figure 5)

90

60

130

115

75

165

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

ISD

I SDM(

•)

Source-drain Current

(pulsed)

3.5

14

A

VSD

Forward On Volt age

ISD =3.5 A

VGS =0

2

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 3.5 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

(see test circuit, figure 5)

900

10

23

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

STP3N100/FI

3/10

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