STP3NB90 datasheet(2/6 Pages) STMICROELECTRONICS

Numer części	STP3NB90

Szczegółowy opis	N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

TO-220

TO220-FP

Rthj-case

Thermal Resistance Junction-case

Max

1.25

3.57

oC/W

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

3.5

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, I

D = IAR, VDD = 50 V)

233

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

900

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 125

oC

1

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

34

5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V

ID = 1.7 A

4

4.2

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

3.5

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID = 1.7 A

1.6

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

700

90

7

pF

STP3NB90/FP

2/6

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